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WTC2302

Weitron Technology
Part Number WTC2302
Manufacturer Weitron Technology
Description Enhancement Mode Power MOSFET
Published Sep 10, 2008
Detailed Description WTC2302 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE ...
Datasheet PDF File WTC2302 PDF File

WTC2302
WTC2302

Overview
WTC2302 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.
3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.
5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1, 2 Total Power Dissipation (TA =25°C ) Maximum Junction-ambient 3 (T A Unless Otherwise Specified) Symbol V DS VG S ID IDM PD R θJA T J , T s tg Value 20 ±8 2.
3 8 0.
9 145 -55~+150 Unit V A A W °C /W °C Operating Junction and Storage Temperature Range www.
DataSheet4U.
com Device Marking WTC2302 = N02 WEITRON http://www.
weitron.
com.
tw 1/6 Rev.
B 24-Aug-09 WTC2302 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-10μA Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±8V Drain-Source Leakage Current(Tj=25℃) VDS=9.
6V,VGS=0 Drain-Source On-Resistance VGS=4.
5V,ID=2.
8A VGS=2.
5V,ID=2.
0A Forward Transconductance VDS=5V,ID=4.
0A gfs RDS(on) 40 50 6.
5 60 115 mΩ V(BR)DSS VGS(Th) IGSS IDSS 20 0.
6 V 1.
2 ±100 nA - - -1 μA S Dynamic Input Capacitance VGS=0V,VDS=6V,f=1.
0MHz Output Capacitance VGS=0V,VDS=6V,f=1.
0MHz Reverse Transfer Capacitance VGS=0V,VDS=6V,f=1.
0MHz Ciss Coss Crss 427.
12 80.
56 57 pF www.
DataSheet4U.
com WEITRON http://www.
weitron.
com.
tw 2/6 Rev.
B 24-Aug-09 WTC2302 Switching Turn-on Delay Time2 VDD=6V,VGEN =4.
5V,I D =1.
0A,RL =6Ω,RG=6Ω Rise Time VDD=6V,VGEN =4.
5V,I D =1.
0A,RL =6Ω,RG=6Ω Turn-off Delay Time VDD=6V,VGEN =4.
5V,I D =1.
0A,RL =6Ω,RG=6Ω Fall Time VDD=6V,VGEN =4.
5V,I D =1.
0A,RL =6Ω,RG=6Ω Total Gate Charge2 VDS=6V,VGS=4.
5V,ID=2.
8A Gate-Source Charge VDS=6V,VGS=4.
5V,ID=2.
8A Gate-Drain Change VDS=6V,VGS=4.
5V,ID=2.
8A td(on) 6.
16 7.
56 16.
61 4.
07 3.
69 0.
7 1.
06 ns td (off) nC tr tf Qg Qgs Qgd Sou...


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