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WTC2305

Weitron Technology
Part Number WTC2305
Manufacturer Weitron Technology
Description Enhancement Mode Power MOSFET
Published Sep 10, 2008
Detailed Description WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLT...
Datasheet PDF File WTC2305 PDF File

WTC2305
WTC2305

Overview
WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.
2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±12 -4.
2 -30 1.
4 140 -55~+150 Unit V A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 www.
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tw WEITRON 1/4 Rev.
B 05-Jun-09 WTC2305 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage C urrent VGS = ±12V Drain- Source Leakage Current(Tj=25˚C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS=-10V,ID=-4.
2A VGS=-4.
5V,ID=-4.
0A VGS=-2.
5V,ID=-1.
0A Forward Transconductance VDS =-5.
0V, ID =-5.
0A R DS(o n) 7 53 64 86 11 70 85 130 mΩ S V(BR)DSS VGS(Th) I GSS I DSS -30 -0.
7 V -1.
3 ±100 nA - - -1 μA g fs Dynamic Total Gate Charge VDS = -15V, ID = -4A, VGS = -4.
5V Gate-Source Charge VDS = -15V, ID = -4A, VGS = -4.
5V Gate-Drain Charge VDS = -15V, ID = -4A, VGS = -4.
5V Turn-On Delay Time VDD = -15V, RL= 3.
6Ω , ID = -1A, VGEN = -10V , RG = 6Ω Turn-On Rise Time VDD = -15V, RL= 3.
6Ω , ID = -1A, VGEN = -10V , RG = 6Ω Turn-Off Delay Time VDD = -15V, RL= 3.
6Ω , ID = -1A, VGEN = -10V , RG = 6Ω Turn-Off Fall Time VDD = -15V, RL= 3.
6Ω ID = -1A, VGEN = -10V , RG = 6Ω Input Capacitance VDS = -15V, VGS = 0V , f = 1.
0 MHz Output Capacitance VDS = -15V...


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