WTC2302 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.
3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) 60m Ω@VGS =4.
5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1, 2 Total Power Dissipation (TA =25°C ) Maximum Junction-ambient 3 (T A Unless Otherwise Specified) Symbol V DS VG S ID IDM PD R θJA T J , T s tg Value 20 ±8 2.
3 8 0.
9 145 -55~+150 Unit V A A W °C /W °C Operating Junction and Storage Temperature Range www.
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