WTC2310 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERS DRAIN SOUCE VOLTAGE 60 VOLTAGE com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R JA Value 60 ±20 3.
0 2.
3 10 1.
38 90 -55~+150 Unit V A W ℃/W ℃ Operating Junction and Storage Temperature Range TJ, Tstg Devic...

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