TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K01F
SSM3K01F
High Speed Switching Applications
Unit: mm
• Small package • Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V)
: Ron = 150 mΩ (max) (VGS = 2.
5 V) • Low gate threshold voltage: Vth = 0.
6 to 1.
1 V (VDS = 3 V, ID = 0.
1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
±10
V
Drain current
DC Pulse
ID
1.
3
A
IDP
2.
6
Drain power dissipation
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
TO-236MOD
Note:
Using continuously under heavy loads (e.
g.
the applicatio...