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TC2996D
REV2_20070503
2.
45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 12 W Typical Power at 2.
45 GHz • 11 dB Typical Linear Power Gain at 2.
45 GHz • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 30 mm • 100 % DC and RF Tested
PHOTO ENLARGEMENT
• Flange Ceramic Package
DESCRIPTION The TC2996D is a packaged Pseudomorphic High Electron Mobility
Transistor (PHEMT) power
transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
T...