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TC2998E

Transcom
Part Number TC2998E
Manufacturer Transcom
Description GaAs Power FETs
Published Aug 22, 2011
Detailed Description www.DataSheet4U.net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.7GHz 20W Packaged GaAs Power FETs FEATUR...
Datasheet PDF File TC2998E PDF File

TC2998E
TC2998E

Overview
www.
DataSheet4U.
net - Preliminary Datasheet - TC2998E PRE.
1_01/21/2008 2.
5-2.
7GHz 20W Packaged GaAs Power FETs FEATURES      20 W Typical Power 10.
5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for military or commercial applications.
ELECTRICAL SPECIFICATIONS Symbol FREQ P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4.
5A, f=2.
5 – 2.
7GHz Linear Power Gain Vd = 10V, Id = 4.
5A, f=2.
5 – 2.
7GHz Intercept Point of the 3 -order Intermodulation, Vd = 10V, Id = 4.
5A, f=2.
5 – 2.
7GHz, *PSCL = 31 dBm rd MIN 2.
5 42 9.
5 TYP MAX 2.
7 UNIT GHz dBm dB dBm % A mS Volts Volts C/W 43 10.
5 52 37 18.
75 13500 -1.
7 22 0.
6 Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level, delta frequency=5MHz.
TRANSCOM, INC.
, 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.
O.
C.
Web-Site: www.
transcominc.
com.
tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/2 www.
DataSheet4U.
net TC2998E ABSOLUTE MAXIMUM RATINGS at 25 C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 37dBm 150 W 175 C - 65 C to +175 C PRE.
3_01/21/2008 HANDLING PRECAUTIONS: The user mus...


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