DatasheetsPDF.com

TC2998F

Transcom
Part Number TC2998F
Manufacturer Transcom
Description GaAs Power FETs
Published Aug 22, 2011
Detailed Description www.DataSheet4U.net - Preliminary Datasheet - TC2998F PRE.3_01/21/2008 2.7-2.9GHz 20W Packaged GaAs Power FETs FEATUR...
Datasheet PDF File TC2998F PDF File

TC2998F
TC2998F

Overview
www.
DataSheet4U.
net - Preliminary Datasheet - TC2998F PRE.
3_01/21/2008 2.
7-2.
9GHz 20W Packaged GaAs Power FETs FEATURES      20 W Typical Power 10 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998F is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS Symbol FREQ P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4.
5A, f=2.
7 – 2.
9GHz Linear Power Gain Vd = 10V, Id = 4.
5A, f=2.
7 – 2.
9GHz Intercept Point of the 3 -order Intermodulation, Vd = 10V, Id = 4.
5A, f=2.
7 – 2.
9GHz, *PSCL = 31 dBm rd MIN 2.
7 42 9 TYP MAX 2.
9 UNIT GHz dBm dB dBm % A mS Volts Volts C/W 43 10 52 37 18.
75 13500 -1.
7 22 0.
6 Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level, delta frequency=5MHz.
TRANSCOM, INC.
, 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.
O.
C.
Web-Site: www.
transcominc.
com.
tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/2 www.
DataSheet4U.
net TC2998F ABSOLUTE MAXIMUM RATINGS at 25 C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 37dBm 150 W 175 C - 65 C to +175 C PRE.
3_01/21/2008 HANDLING PRECAUTIONS: The user must operate in a cle...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)