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TC2997A

Transcom
Part Number TC2997A
Manufacturer Transcom
Description GaAs Power FETs
Published Aug 22, 2011
Detailed Description www.DataSheet4U.net TC2997A PRE4_20050708 Preliminary 1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES ...
Datasheet PDF File TC2997A PDF File

TC2997A
TC2997A

Overview
www.
DataSheet4U.
net TC2997A PRE4_20050708 Preliminary 1.
6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20 W Typical Power at 1.
6 GHz • 13 dB Typical Linear Power Gain at 1.
6 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 50 mm • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2997A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS ( VDS = 10.
5, IDS = 5A @ 1.
6GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3rd-order Intermodulation*PSCL = 32 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 CONDITIONS Output Power at 1dB Gain Compression Point MIN 42 12 TYP 43 13 52 40 12.
5 9000 -1.
7 22 0.
9 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W * PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC.
, 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.
O.
C.
Web-Site: www.
transcominc.
com.
tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/2 www.
DataSheet4U.
net TC2997A PRE4_20050708 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 37 dBm 100 W 175 °C - 65 °C to +175 °C HANDLING PRECAUTIONS: The user must ...


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