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TC2996D

Transcom
Part Number TC2996D
Manufacturer Transcom
Description 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
Published Feb 3, 2009
Detailed Description www.DataSheet4U.com TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typica...
Datasheet PDF File TC2996D PDF File

TC2996D
TC2996D

Overview
www.
DataSheet4U.
com TC2996D REV2_20070503 2.
45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.
45 GHz • 11 dB Typical Linear Power Gain at 2.
45 GHz • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 30 mm • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS ( VDS = 10.
5V, IDS = 2.
5A @ 2.
45 GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3 -order Intermodulation, *PSCL = 28 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 rd CONDITIONS Output Power at 1dB Gain Compression Point MIN 39.
5 10 TYP 41 11 50 40 7.
5 5400 -1.
7 22 1.
5 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W * PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC.
, 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.
O.
C.
Web-Site: www.
transcominc.
com.
tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 www.
DataSheet4U.
com TC2996D REV2_20070503 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 35dBm 30 W 175 °C - 65 °C to +175 °C HANDLING PRECAUTIONS: The user must ope...


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