INCHANGE Semiconductor
com isc N-Channel Mosfet
Transistor
isc Product Specification
9N60
·FEATURES ·Drain Current –ID= 8.
5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max.
Operating Junction Temperature Storage Temperature VALUE 600 ±20 8.
5 34 125 150 -55~150 UNIT V V ...