CYStech Electronics Corp.
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Spec.
No.
: C606E3 Issued Date : 2004.
08.
18
Revised Date : Page No.
: 1/4
Low Vcesat
NPN Epitaxial Planar
Transistor
BTN3501E3
• Low VCE(sat) • High BVCEO • Excellent current gain characteristics
Features
Symbol
BTN3501E3
Outline
TO-220AB
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1.
Single Pulse , Pw≦380µs,Dut...