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BTN3501E3

Cystech Electonics
Part Number BTN3501E3
Manufacturer Cystech Electonics
Description High Speed Switching diode
Published Mar 27, 2009
Detailed Description CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 1/4...
Datasheet PDF File BTN3501E3 PDF File

BTN3501E3
BTN3501E3

Overview
CYStech Electronics Corp.
www.
DataSheet4U.
com Spec.
No.
: C606E3 Issued Date : 2004.
08.
18 Revised Date : Page No.
: 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 • Low VCE(sat) • High BVCEO • Excellent current gain characteristics Features Symbol BTN3501E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1.
Single Pulse , Pw≦380µs,Duty≦2%.
Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 10 20 (Note 1) 2 50 62.
5 2.
5 150 -55~+150 Unit V V V A W °C/W °C/W °C °C BTN3501E3 CYStek Product Specification CYStech Electronics Corp.
www.
DataSheet4U.
com Spec.
No.
: C606E3 Issued Date : 2004.
08.
18 Revised Date : Pa...


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