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BTN3501F3

Cystech Electonics Corp
Part Number BTN3501F3
Manufacturer Cystech Electonics Corp
Description Low Vcesat NPN Epitaxial Planar Transistor
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor www.DataSheet4U.com Issued Date : 2005.11.24 Revis...
Datasheet PDF File BTN3501F3 PDF File

BTN3501F3
BTN3501F3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor www.
DataSheet4U.
com Issued Date : 2005.
11.
24 Revised Date : 2005.
11.
30 Page No.
: 1/6 Spec.
No.
: C606F3 BTN3501F3 • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free package Features Symbol BTN3501F3 Outline TO-263 C B E B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1.
Single Pulse , Pw≦380µs,Duty≦2%.
Symbol VCBO VCEO VEBO IC ICP PD RθJA RθJC Tj Tstg Limits 80 80 6 10 20 (Note 1) 2 60 62.
5 2.
08 150 -55~+150 Unit V V V A W °C/W °C/W °C °C BTN3501F3 CYStek Product Specification CYStech Electronics Corp.
Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES I...


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