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BTN3501J3

Cystech Electonics
Part Number BTN3501J3
Manufacturer Cystech Electonics
Description High Speed Switching diode
Published Mar 27, 2009
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT Spec. No. : C606J3 Iss...
Datasheet PDF File BTN3501J3 PDF File

BTN3501J3
BTN3501J3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT Spec.
No.
: C606J3 Issued Date : 2003.
10.
07 Revised Date :2013.
10.
30 Page No.
: 1/7 80V 8A 0.
6V (max.
) Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol BTN3501J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTN3501J3-XX-T3-S Package TO-252 (RoHS compliant package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTN3501J3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C606J3 Issued Date : 2003.
10.
07 Revised Date :2013.
10.
30 Page No.
: 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1.
Single Pulse , Pw≦380μs,Duty≦2%.
2.
When mounted on a PCB with the minimum pad size.
Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1.
75 (Note 2) 20 71.
4 (Note 2) 6.
25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE *hFE fT Cob Min.
80 60 40 - Typ.
0.
3 1.
0 50 130 Max.
10 50 0.
6 1.
5 1.
5 - Unit V μA μA V V V MHz pF Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=8A, IB=0.
4A IC=5A, IB=50mA IC=8A, IB=0.
8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of VCE(sat) 2 Rank KB Range <0.
62V KC 0.
58V~0.
82V N 0.
78V~1.
5V BTN3501J3 CYStek Product ...


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