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BTN3501I3

Cystech Electonics
Part Number BTN3501I3
Manufacturer Cystech Electonics
Description High Speed Switching diode
Published Mar 27, 2009
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501I3 Features • Low VCE(sat) • High BVCEO • E...
Datasheet PDF File BTN3501I3 PDF File

BTN3501I3
BTN3501I3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor BTN3501I3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package BVCEO IC RCESAT Spec.
No.
: C606I3 Issued Date : 2003.
11.
25 Revised Date : 2009.
02.
04 Page No.
: 1/5 80V 8A 60mΩ Symbol BTN3501I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1.
Single Pulse , Pw≦380μs,Duty≦2%.
BTN3501I3 Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.
5 20 83.
3 6.
25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C6...


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