High Speed Switching diode
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 1/7 80V 8A 0.6V (max.) Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol BTN3501J3 Outline TO-252(DPAK) B：Base C：Colle...
Cystech Electonics