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AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration.
Standard Product AO8832 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) 24mΩ (VGS = 10V) RDS(ON) 28mΩ (VGS = 4.
5V) RDS(ON) 31mΩ (VGS = 3.
6V) RDS(ON) 39mΩ (VGS = 2.
5V)
D1 TSSOP-8 Top View D1/D2...