P Channel Enhancement Mode MOSFET
ST2301A
-3.
0A
DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 FEATURE z 3 D G 1 1.
Gate 2.
Source S 2 3.
Drain z z z z -20V/-2.
8A, RDS(ON) = 80mΩ (Typ.
) @VGS = -4.
5V -20V/-2.
0A, RDS(ON) = 1...