Transistors
2SC5863
Silicon
NPN epitaxial planar type
For general amplification
0.
40+–00.
.
0150 3
Unit: mm 0.
16+–00.
.
0160
1.
50–+00.
.
0255 2.
8–+00.
.
32
0.
4±0.
2
■ Features
5˚
• High collector-emitter voltage (Base open) VCEO
1
2
(0.
65)
• High transition frequency fT
(0.
95) (0.
95)
1.
9±0.
1 2.
90+–00.
.
0250
/ ■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
300
1.
1–+00.
.
12 1.
1–+00.
.
13
V
c type Collector-emitter voltage (Base open) VCEO
300
0 to 0.
1
V
n d tage.
ued Emitter-base voltage (Collector open) VEBO
7
V
le s ontin Collector current
IC
70
mA
a elifecyc disc Peak collector current
ICP
100
mA
n...