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AOP601 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AOP601 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
A
Schottky diode in parallel with the n-channel FET reduces body diode related losses.
Standard Product AOP601 is Pb-free (meets ROHS & Sony 259 specifications).
AOP601L is a Green Product ordering option.
AOP601 and AOP601L are electrically identical.
Features
n-channel p-channel -30V VDS (V) = 30V ID = 7.
5A (VGS = 10V) -6.
6A RDS(ON) 28m Ω 35m Ω (VGS = -10V) 43m Ω 58m Ω (VGS = -4.
5V) Scho...