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AOP609 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications).
AOP609L is a Green Product ordering option.
AOP609 and AOP609L are electrically identical.
Features
n-channel p-channel -60V VDS (V) = 60V ID = 4.
7A (VGS=10V) -3.
5A (VGS=-10V) RDS(ON) RDS(ON) 60m Ω (VGS=10V) 115mΩ (VGS =-10V) 75m Ω (VGS=4.
5V) 140mΩ (VGS =-4.
5V) ESD Rating: 1500V HBM 3000V HMB
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2...