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2SC5890

Part Number 2SC5890
Manufacturer Renesas Technology
Description Silicon NPN Transistor
Published Mar 20, 2010
Detailed Description 2SC5890 com Silicon NPN Epitaxial UHF / VHF wide band amplifier Features • High gain bandwidth product:...
Datasheet 2SC5890




Overview
2SC5890 com Silicon NPN Epitaxial UHF / VHF wide band amplifier Features • High gain bandwidth product: fT = 7.
8 GHz typ.
• High power gain and low noise figure; PG = 12 dB typ.
, NF = 1.
0 dB typ.
at f = 900 MHz • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.
7 mm) • High withstanding to ESD of collector to emitter: Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition.
Outline MPAK ADE-208-1533 (Z) 1st.
Edition Aug.
2002 Note: Marking is “FS-”.
3 1 2 1.
Emitter 2.
Base 3.
Collector 2SC5890 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage Collector to emitter voltage Emitter to b...






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