N-Channel Enhancement Mode Power MOSFET
WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Compute...
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