|
Part Number
|
WTC2312 |
|
Manufacturer
|
Weitron Technology |
|
Description
|
N-Channel Enhancement Mode Power MOSFET |
|
Published
|
Mar 19, 2011 |
|
Detailed Description
|
WTC2312
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE ...
|
|
Datasheet
|
WTC2312
|
Overview
WTC2312
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 4.
9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE
Features:
* Super High Dense Cell Design For Low RDS(ON) RDS(ON)41mΩ @VGS=4.
5V RDS(ON)47mΩ @VGS=2.
5V RDS(ON)57mΩ @VGS=1.
8V * Capable of 2.
5V gate drive * Rugged and Reliable * Lower On-Resistance
2 SOURCE
3 1 2
SOT-23
Application:
* Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,VGS@4.
5V(TA=25°C) ,VGS@4.
5V(TA=70°C) Pulsed Drain Current 1, 2 Total Power Dissipation(TA=25°C) Maximum Junction-ambient 3 Operating...
Similar Datasheet