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TC2996A
REV1_20070503
1.
6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 12 W Typical Power at 1.
6 GHz • 13 dB Typical Linear Power Gain at 1.
6 GHz • High Linearity:IP3 = 50 dBm Typical • High Power Added Efficiency:Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 30 mm • 100 % DC and RF Tested • Flange Ceramic Package PHOTO ENLARGEMENT
DESCRIPTION The TC2996A is a packaged Pseudomorphic High Electron Mobility
Transistor (PHEMT) power
transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical...