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TC2996B
REV1_20070503
1.
9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 12 W Typical Power at 1.
9 GHz • 13 dB Typical Linear Power Gain at 1.
9 GHz • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Lg = 1 µm, Wg = 30 mm • 100 % DC and RF Tested PHOTO ENLARGEMENT
• Flange Ceramic Package
DESCRIPTION The TC2996B is a packaged Pseudomorphic High Electron Mobility
Transistor (PHEMT) power
transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent qua...