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TC2997G
PRE2_20071107
Preliminary
3.
5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
16 W Typical Power at 3.
5 GHz 9 dB Typical Linear Power Gain at 3.
5 GHz High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested Flange Ceramic Package Suitable for WiMax and WLL applications
PHOTO ENLARGEMENT
DESCRIPTION The TC2997G is a packaged Pseudomorphic High Electron Mobility
Transistor (PHEMT) power
transistor.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynam...