Part Number
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PTFA091201F |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FETs |
Published
|
Aug 6, 2013 |
Detailed Description
|
PTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, ...
|
Datasheet
|
PTFA091201F
|
Overview
PTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA091201E Package H-36248-2
PTFA091201F Package H-37248-2
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, ƒ = 959.
8 MHz
Features
• • Thermally-enh...
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