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PTFA091201GL

Infineon
Part Number PTFA091201GL
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W...
Datasheet PDF File PTFA091201GL PDF File

PTFA091201GL
PTFA091201GL

Overview
PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
8 MHz 0 55 50 • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 18.
5 dB - Efficiency = 44% Typical CW performance - Output power at P–1dB = 135 W - Gain = 17 dB - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power • • Drain Efficiency (%) Modulation Spectrum (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50 45 Efficiency 40 35 400 KHz 30 25 20 • 600 KHz 15 10 • • • Output Power, avg.
(dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 50 W (AVG), ƒ = 959.
8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated Symbol EVM (RMS) ACPR ACPR Gps Min — — — — — Typ 2.
5 –60 –74 18.
5 44 Max — — — — — Unit % dBc dBc dB % ηD *See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling pr...


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