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PTFA091201F

Infineon
Part Number PTFA091201F
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, ...
Datasheet PDF File PTFA091201F PDF File

PTFA091201F
PTFA091201F


Overview
PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
8 MHz Features • • Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 19.
0 dB - Efficiency = 44% Typical CW performance - Output power at P–1dB = 135 W - Gain = 18.
0 dB - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Pb-free and RoHS compliant Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power 0 55 50 • Modulation Spectrum (dBc) -10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50 Efficiency Drain Efficiency (%) 45 40 35 • 400 kHz 30 25 20 • • • • 600 kHz 15 10 Output Power, Avg.
(dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 50 W, ƒ = 959.
8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated Symbol EVM (RMS) ACPR ACPR Gps Min — — — — — Typ 2.
5 –62 –74 19 44 Max — — — — — Unit % dBc dBc dB % ηD *See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev.
03, 2007-11-19 Free Datasheet h...



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