DatasheetsPDF.com

PTFA091201E

Infineon
Part Number PTFA091201E
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, ...
Datasheet PDF File PTFA091201E PDF File

PTFA091201E
PTFA091201E

Overview
PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
8 MHz Features • • Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 19.
0 dB - Efficiency = 44% Typical CW performance - Output power at P–1dB = 135 W - Gain = 18.
0 dB - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Pb-free and ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)