DatasheetsPDF.com

PTFA091201HL

Infineon
Part Number PTFA091201HL
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W...
Datasheet PDF File PTFA091201HL PDF File

PTFA091201HL
PTFA091201HL

Overview
PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
8 MHz 0 55 50 • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 18.
5 dB - Efficiency = 44% Typical CW performance - Output power at P–1dB = 135 W - Gain = 17 d...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)