AO8801
Dual P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8801 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO8801 is Pb- free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = -20V ID = -4.
7 A (V GS = -4.
5V) RDS(ON) 42mΩ (VGS = -4.
5V) RDS(ON) 53mΩ (VGS = -2.
5V) RDS(ON) 70mΩ (VGS = -1.
8V) ESD Rating: 3000V HBM
TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1
D
D2
G2 S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter S...