AO8807
Dual P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8807 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch.
AO8807 and AO8807L are electrically identical.
- RoHS Compliant -Halogen Free
Features
VDS (V) = -12V ID = -6.
5 A (VGS = -4.
5V) RDS(ON) 20mΩ (VGS = -4.
5V) RDS(ON) 24mΩ (VGS = -2.
5V) RDS(ON) 30mΩ (VGS = -1.
8V)
D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2
Rg Rg
D2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Co...