Part Number
|
K2960 |
Manufacturer
|
Panasonic |
Description
|
Silicon N-Channel Power F-MOS FET |
Published
|
Jan 27, 2014 |
Detailed Description
|
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS 250...
|
Datasheet
|
K2960
|
Overview
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown
unit: mm
4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2
M Di ain sc te on na tin nc ue e/ d
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.
0±0.
3 4.
1±0.
2 8.
0±0.
2 Solder Dip 3.
0±0.
2
s Applications
13.
7–0.
2
+0.
5
1.
2±0.
15 1.
45±0.
15 0.
75±0.
1
2.
6±0.
1
0.
7±0.
1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Symbol Drain to Source breakdown voltage Gate to Source voltage Drain current VDSS VGSS ID IDP
DC
Pulse
Avalanc...
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