13001
NPN Epitaxial Silicon
Transistor
Features
Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW
TO-126
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW
o o
C C
1.
Emitter
2.
Collector
3.
Base
Electrical Characteristics (TA=25oC)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current...