2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev.
02 — 29 July 2010 Product data sheet
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Product profile
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1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2 Features and benefits
AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast switching
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3 Applications
High-speed line driver Low-side loadswitch Relay driver Switching circuits
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4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = ...