2N7002BKMB
83B
60 V, single N-channel Trench MOSFET
Rev.
2 — 13 June 2012 Product data sheet
1.
Product profile
1.
1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
1.
2 Features and benefits
Very fast switching Trench MOSFET technology ESD protection up to 2 kV Logic-level compatible Ultra thin package profile with 0.
37 mm height
1.
3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.
4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drai...