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2N7002BKS

NXP Semiconductors
Part Number 2N7002BKS
Manufacturer NXP Semiconductors
Description dual N-channel MOSFET
Published Aug 19, 2014
Detailed Description 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1....
Datasheet PDF File 2N7002BKS PDF File

2N7002BKS
2N7002BKS

Overview
2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev.
2 — 23 September 2010 Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.
3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA [1] Min - Typ 1 Max 60 ±20 300 1.
6 Unit V V mA Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning Symbol S1 G1 D2 S2 G2 D1 Description source 1 gate 1 drain 2 source 2 gate 2 drain 1 3 4 1 2 3 2 5 6 5 4 1 6 Simplified outline Graphic symbol 017aaa055 3.
Ordering information Table 3.
Ordering information Package Name 2N7002BKS SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4.
Marking Table 4.
Marking codes Marking code[1] ZT* Type number 2N7002BKS [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current Conditions Tamb = 25 °C Tamb = 25 °C VGS = 10 V Tamb = 25 °C Tamb = 100 °C 2N7002BKS All information provided in this document is subject to legal disclaimers.
Min [1] Max 60 ±20 300 215...


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