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2N7002BKS

nexperia
Part Number 2N7002BKS
Manufacturer nexperia
Description dual N-channel MOSFET
Published Jul 28, 2019
Detailed Description 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile...
Datasheet PDF File 2N7002BKS PDF File

2N7002BKS
2N7002BKS

Overview
2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev.
2 — 23 September 2010 Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 2 kV „ AEC-Q101 qualified 1.
3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA - - 60 V - - ±20 V [1] - - 300 mA - 1 1.
6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning Symbol S1 G1 D2 S2 G2 D1 Description source 1 gate 1 drain 2 source 2 gate 2 drain 1 Simplified outline Graphic symbol 654 1 6 123 2 5 34 017aaa055 3.
Ordering information Table 3.
Ordering information Type number Package Name Description 2N7002BKS SC-88 plastic surface-mounted package; 6 leads Version SOT363 4.
Marking Table 4.
Marking codes Type number 2N7002BKS [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.
Limiting values Marking code[1] ZT* 2N7002BKS Product data sheet Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Per transistor VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage Tamb = 25 °C ID drain current VGS = 10 V Tamb = 25 °C Tamb = 100 °C - [1] - Max Unit 60 V ±20 ...


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