2N7002F
N-channel TrenchMOS FET
Rev.
03 — 28 April 2006 Product data sheet
1.
Product profile
1.
1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features
s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS technology
1.
3 Applications
s Logic level translator s High-speed line driver
1.
4 Quick reference data
s VDS ≤ 60 V s RDSon ≤ 2 Ω s ID ≤ 475 mA s Ptot ≤ 0.
83 W
2.
Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
D
Simplified outline
Symbol
G
SOT23
mbb076
S
Philips Semiconductors
2N7002F
N-channel TrenchMOS FET...