DATA SHEET
SILICON
TRANSISTOR
2SC5177
NPN EPITAXIAL SILICON
TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Current Consumption and High Gain |S21e|2 = 9.
0 dB TYP.
@ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.
5 dB TYP.
@ VCE = 1 V, IC = 5 mA, f = 2 GHz
0.
4 –0.
05
+0.
1
PACKAGE DIMENSIONS (Units: mm)
2.
8±0.
2 1.
5 0.
65 –0.
15
+0.
1
• Mini-Mold package EIAJ: SC-59
0.
95
ORDERING INFORMATION
PART NUMBER 2SC5177-T1 QUANTITY 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No.
3 (collector) facing the perforations Embossed tape, 8 mm wide, pins No.
1 (emitter) and No.
2 (base) facing the perforations
2.
9±0.
2
2
T84
0.
95
0.
3
2SC5177-T2
3 000 un...