2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS =0.
020 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain(Flange 3.
Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A m...

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