|
Part Number
|
GT5G102 |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
Silicon N-Channel IGBT |
|
Published
|
Sep 3, 2014 |
|
Datasheet
|
GT5G102
|
Features
GT5G102
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G102
Strobe Flash Applications
Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) · · Enhancement-mode 12...
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