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GT5G134

Toshiba
Part Number GT5G134
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Jan 30, 2024
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT5G134 1. Applications • Dedicated to Photo-Flash Intensity Control Applications ...
Datasheet PDF File GT5G134 PDF File

GT5G134
GT5G134

Overview
Discrete IGBTs Silicon N-Channel IGBT GT5G134 1.
Applications • Dedicated to Photo-Flash Intensity Control Applications • Dedicated to High-Speed-Switching Photo Flash Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) Enhancement mode (2) High-speed switching: tf = 0.
6 µs (typ.
) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.
0 V (min) (@IC = 110 A) (4) Peak collector current: ICP = 110 A (max) (5) Built-in zener diode between gate and emitter (6) SOP-8 package 3.
Packaging and Internal Circuit GT5G134 SOP-8 1,2,3: Emitter 4: Gate 5,6,7,8: Collector Start of commercial production 2012-07 1 2014-01-07 Rev.
2.
0 GT5G134 4.
Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage (DC) Gate-emitter voltage (pulsed) VCES 400 V VGES ±6 ±8 Collector current (pulsed) Collector power dissipation Collector power dissipa...


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