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GT5G133

Toshiba Semiconductor
Part Number GT5G133
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Feb 16, 2011
Detailed Description TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications • Enhancem...
Datasheet PDF File GT5G133 PDF File

GT5G133
GT5G133

Overview
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 GT5G133 Strobe Flash Applications • Enhancement-mode • Low gate drive voltage: VGE = 2.
5 V (min) (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Pulse (Note 1) ICP 130 A Collector power (Note 2a) PC (1) 0.
83 W dissipation(t = 10 s) (Note 2b) PC (2) 0.
69 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute m...


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