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GT5G131

Toshiba Semiconductor
Part Number GT5G131
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • •...
Datasheet PDF File GT5G131 PDF File

GT5G131
GT5G131

Overview
GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • • • • • 3-V gate drive voltage: VGE = 3.
0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 5 130 1.
1 150 −55~150 2 Unit V V Collector current Collector power dissipation Junction temperature Storage temperature range A W °C °C JEDEC JEITA TOSHIBA ― ― 2-6J1C Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.
5 t] Weight: 0.
080 g (typ.
) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type.
Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1 2002-05-...


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