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GT5G102

Toshiba Semiconductor
Part Number GT5G102
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Application...
Datasheet PDF File GT5G102 PDF File

GT5G102
GT5G102

Overview
GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) · · Enhancement-mode 12 V gate drive · · · Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC 1 ms Ta = 25°C Tc = 25°C Symbol VCES VGES IC ICP PC PC Tj Tstg Rating 400 ±20 5 130 1.
3 20 150 -55~150 Unit V V A A W W °C °C JEDEC JEITA ― ― TOSHIBA (A) 2-7B5C (B) 2-7B6C Weight: 0.
036 g Equivalent Circuit Collector Gate Emitter 1 2003-03-18 GT5G102 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES IC...


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