Part Number
|
K439 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
2SK439 |
Published
|
Oct 13, 2014 |
Detailed Description
|
2SK439
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
SPAK
1
23
1. Gate 2. Source 3. Drain
2SK439
Abs...
|
Datasheet
|
K439
|
Overview
2SK439
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
SPAK
1
23
1.
Gate 2.
Source 3.
Drain
2SK439
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID IG Pch Tch Tstg Ratings 20 ±5 30 ±1 300 150 –55 to +150 Unit V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Power gain Noise figure Note: Grade I DSS D 4 to 8 E 6 to 10 Symb...
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